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Sr. Member Technical Staff - ESD and Latch-Up - HBM

Folsom, CA💼 Full-time💰 $177,000–$177,000🗓 2026-06-16 → 2026-07-31

Core

Define ESD and latch-up architecture for next-generation HBM products across advanced nodes and 3D integration to solve reliability challenges.

Role type

Sr. IC Architect (ESD/Latch-Up)

Builds

High-performance memory products (HBM) for data centers and AI applications

Domain

Semiconductor / Memory / 3D Integration

Deliverable

production ML models | product features | infrastructure

Required skills

ESD and latch-up design, advanced CMOS technologies (FinFET, GAA), 3D IC/TSV/die-to-die interfaces, silicon validation, foundry/packaging collaboration

Preferred skills

Multi-die/stacked memory architecture, ESD device/circuit design, PDK collateral development, silicon failure debugging, cross-functional technical leadership

Technologies

FinFET, GAA, TSV, 3D IC

Responsibilities

Define end-to-end ESD and latch-up architecture across base die, DRAM die, and interconnects; Develop protection strategies for high-speed I/O, TSV interfaces, and advanced packaging; Establish ESD/LUP standards, rule decks, and signoff criteria; Drive correlation between design assumptions, silicon validation, and field reliability; Partner with foundry and packaging teams on system-level ESD challenges

Seniority

Senior, hands-on IC

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