CareerPlan

Sr. Member Technical Staff - ESD and Latch-Up - HBM

Folsom, CAFull-time$177k–$334k2026-06-16 → 2026-11-11
Based in United States

Core

Define ESD and latch-up architecture for next-generation HBM products across advanced nodes and 3D integration to solve reliability challenges.

Role type

Sr. IC Architect (ESD/Latch-Up)

Builds

High-performance memory products (HBM) with robust reliability

Domain

Semiconductor / Memory / Advanced Packaging

Required skills

ESD and latch-up design, advanced CMOS technologies (FinFET, GAA), 3D IC/TSV/die-to-die interfaces, silicon validation, system-level reliability analysis

Preferred skills

Multi-die/stacked memory system architecture, ESD device/circuit design, PDK collateral development, silicon failure debugging, cross-functional technical leadership

Technologies

FinFET, GAA, TSV, 3D IC, HBM

Responsibilities

Define end-to-end ESD and latch-up architecture across base die, DRAM die, and interconnects; Develop protection strategies for high-speed I/O, TSV interfaces, and advanced packaging; Establish ESD/LUP standards, rule decks, and signoff criteria; Drive correlation between design assumptions, silicon validation, and field reliability; Partner with foundry and packaging teams on system-level ESD challenges

Seniority

Senior, hands-on IC