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HBM IO Architecture, Principal Engineer

Richardson, TX💼 Full-time🗓 2026-04-16 → 2026-07-31

Core

Technical authority for HBM IO circuits and PHY architecture, leading multi-generation initiatives in TSV link definition, IO training, and silicon validation to enable high-bandwidth, low-power AI and HPC platforms.

Role type

Principal Engineer, Heterogeneous Integration (HBM IO Design Architecture)

Builds

Industry-leading HBM solutions for AI, ML, and high-performance computing platforms

Domain

Semiconductor / Memory / High-Speed IO / TSV

Deliverable

production ML models

Required skills

Analog and mixed-signal CMOS circuit design, high-speed IO architecture (Rx/Tx, PLL, DLL, DCC, phase interpolators, equalizers), TSV link definition, IO training features, silicon validation, system-level thinking

Preferred skills

HBM, DRAM, or advanced memory interface design, patents/publications in high-speed IO or TSV, experience with UCIe or JEDEC memory standards, technical leadership across multi-disciplinary programs

Technologies

TSV, HBM, LPDDR, UCIe, JEDEC standards

Responsibilities

Define and own HBM IO and data path architecture across product generations, Architect and analyze TSV-based HBM link schemes, Define and drive HBM PHY IO training features, Architect high-speed IO circuits for the HBM interface die, Establish IO and TSV design standards and drive alignment across teams

Seniority

Principal, technical authority & long-term architectural direction

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