Principal Technology Development Engineer
Core
Develop, optimize, and transfer GaN on Silicon HEMT power device fabrication processes to ensure manufacturability and performance.
Role type
Principal Technology Development Engineer (Semiconductor Process Integration)
Builds
GaN on Silicon HEMT power devices and test chips
Domain
Semiconductor manufacturing, Wide Bandgap (GaN), Power Electronics
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
GaN on silicon HEMT process integration, semiconductor device physics (III-V nitrides), process modules (Photo, Etch, Thin Films, CMP, MOCVD), TCAD process simulations, Design of Experiments (DoE), failure analysis, electrical test data correlation, layout rule development
Preferred skills
CMOS/BCDMOS or Discrete IGBTs/MOSFETs process integration, GaN market trends evaluation, power packaging assembly and reliability, backend processes (BGBM, STM), FMEA development
Technologies
JMP, Spotfire, TCAD tools
Responsibilities
Set up and perform process and device simulations to determine initial process parameters; Design and perform experiments to determine process sequences and parameters; Analyze fabrication data to identify optimization needs; Work with Process Engineering to develop and optimize process modules; Support initial test chip and transfer lot processing to identify and correct problem areas; Provide development updates to upper management and external customers
Seniority
Principal, technical leadership & cross-functional collaboration
