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MOCVD GaN Process Development Engineer

Dallas, TX, United States💼 Full-time🗓 2026-06-03 → 2026-07-22

Core

Direct hands-on development of GaN unit processes and loop integration to support volume production of power electronics products.

Role type

MOCVD GaN Process Development Engineer

Builds

GaN technology products for power electronics

Domain

Semiconductor manufacturing, wide-band gap materials

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

MOCVD GaN epitaxy growth, semiconductor unit process development, loop integration, materials and device physics, SPC methodology, statistical design of experiments, data analytics, problem partitioning

Preferred skills

III-V HEMT device physics, machine learning and AI, growing GaN epi for Power HEMTS and/or RF GaN

Technologies

MOCVD, SPC tools, statistical analysis tools

Responsibilities

Develop robust, low cost, manufacturable GaN unit processes; define process requirements and recipes; design experiments and analyze data; correlate device output to process input; interface with equipment suppliers; match performance between process tools and chambers

Seniority

Mid-level, hands-on IC

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