MTS/Sr. MTS Engineer – Discrete Power FET Technology Development
Core
Lead technology development for onsemi's advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high-volume manufacturing.
Role type
Senior IC semiconductor device engineer (discrete power FETs)
Builds
Next-generation discrete power FET devices (trench MOSFETs, superjunction, SiC/GaN) for power electronics applications
Domain
Semiconductor manufacturing / Power electronics / Wide-bandgap technologies
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
Device architecture definition, TCAD/electro-thermal/compact modeling, failure analysis, DOE/6-sigma/SPC/FMEA, 300mm fabrication processes, post-fab operations (Back-Grind, Packaging, Dicing), wafer/module testing
Preferred skills
High-voltage/high-current applications, automotive AEC-Q101 reliability testing, wide-bandgap (SiC/GaN) physics, advanced packaging (DFN, TO-leadframe, copper clip), statistical analysis tools (JMP, Python, MATLAB)
Technologies
TCAD, SPICE, JMP, Python, MATLAB
Responsibilities
Define electrical targets and device structures to optimize Rds(on), switching performance, and power density; conduct or direct TCAD and electro-thermal simulations; partner with fab process owners to optimize process windows; perform device characterization and failure analysis; drive root-cause analysis for yield and reliability issues; collaborate with systems and packaging teams for system-level integration; generate invention disclosures and patents; provide technical guidance and mentorship to junior engineers; present technical content to executive and customer audiences
Seniority
Senior, hands-on IC with mentorship responsibilities