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Device Integration Engineer

1530 FM 973 Taylor, TX, USA💼 Full-time💰 $106,000–$106,000🗓 2026-05-13 → 2026-07-30

Core

Process-device co-optimization for 2nm Gate-All-Around (GAA) transistor performance, reliability, and yield at Samsung Austin Semiconductor.

Role type

Senior individual-contributor device integration engineer

Builds

2nm GAA technology derivatives and industry-leading device performance

Domain

Semiconductor manufacturing / Advanced node device engineering

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

DOE analysis, root cause analysis, electrical test (ET) trend analysis, parametric yield management, WAT management, process integration knowledge, data mining, SPC, electrical device characterization

Preferred skills

Spotfire, SPICE modeling, Local Layout Effects (LLE) analysis, Material to Hardware Correlation (MHC)

Technologies

Spotfire, SPICE, inline metrology, FDC

Responsibilities

Perform split lot design and DOE analysis to identify key process knobs impacting device performance and yield; Lead root cause analysis for device failures and non-conformances; Own Parametric Yield and Wafer Acceptance Electrical Test (WAT) management for customer accounts; Conduct Local Layout Effects (LLE) analysis to characterize transistor performance variability in GAA nanosheet devices; Lead Material to Hardware Correlation (MHC) task force to link upstream metrology data to final electrical device performance.

Seniority

Senior, hands-on IC

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