CareerPlan

Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology

Boise, ID - Main SiteFull-time2026-06-22 → 2026-11-13
Based in United States

Core

Define and validate future DRAM device and cell technologies, characterizing memory arrays and analyzing electrical behavior to shape the electrical foundation of next-generation products.

Role type

Senior IC device engineer (semiconductor R&D)

Builds

Next-generation DRAM and advanced memory products

Domain

Semiconductor manufacturing / Memory technology

Required skills

Semiconductor device physics (CMOS, diodes), DRAM array characterization, failure analysis, TCAD and compact modeling, statistical data analysis (DOE, JMP, Python), stress methodology development

Preferred skills

Process integration experience, circuit/architecture domain knowledge, cross-functional collaboration

Technologies

TCAD, JMP, Python, 300mm R&D facility

Responsibilities

Define electrical specifications for DRAM and emerging memory technologies; Design and interpret experiments to optimize cell performance; Develop physical and electrical models to identify performance limiters; Create stress methodologies to evaluate device reliability; Analyze array-level behavior to root-cause variability and improve yield; Collaborate with process integration and design teams to translate insights into product improvements

Seniority

Senior, hands-on IC