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Principal Engineer / MTS – NAND Process Pathfinding – Dry Etch

Fab 10N/X, Singapore💼 Full-time🗓 2026-07-08 → 2026-07-31

Core

Architect and deploy next-generation plasma etch solutions to enable future NAND scaling and novel device architectures.

Role type

Principal Engineer / Member of Technical Staff (MTS) – Dry Etch

Builds

Next-generation memory solutions for AI, mobile, automotive, and data center applications

Domain

Semiconductor manufacturing, NAND flash memory, plasma processing

Deliverable

production ML models | product features

Required skills

ICP/CCP plasma etch process development, plasma-surface interactions, etch chemistry, profile control, plasma physics, transport phenomena, materials interactions, advanced dry etch process qualification, AI/ML for engineering, statistical modeling, digital engineering methodologies, technical leadership, supplier engagement

Preferred skills

High aspect ratio etching, advanced pattern transfer, selective etching, complex structure engineering, machine learning for virtual process modeling, mentoring technical teams

Technologies

ICP/CCP plasma etch equipment, AI-enabled engineering tools, advanced analytics, digital workflows

Responsibilities

Develop and refine dry etch processes to satisfy NAND roadmap criteria for structure, performance, and yield; Guide the development of next-generation etch solutions encompassing high aspect ratio patterning, selective etch, profile control, and CD management; Evaluate new plasma chemistries, process technologies, and hardware to enable future device scaling; Collaborate with Process Integration, Thin Films, Wet Etch, Diffusion, Lithography, CMP, Device, and other teams to drive technology development and manufacturability; Leverage AI-enabled engineering tools, advanced analytics, and digital workflows to accelerate process development and improve decision-making

Seniority

Principal, hands-on IC with technical leadership

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