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RF Technology Development Integration Engineer – Principal Engineer

USA - New York - Malta💼 Full-time💰 $85,000–$85,000🗓 2026-05-27 → 2026-08-01

Core

Develop, optimize, and qualify FEOL and BEOL semiconductor devices and processes for RF technology, focusing on performance, cost, and yield.

Role type

Principal RF Technology Development Integration Engineer

Builds

RF semiconductor devices and processes for global manufacturing

Domain

Semiconductor manufacturing (FEOL/BEOL), RF technology, Silicon/SiGe BiCMOS

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor process development, CMOS device physics, DC and RF device characterization, S-parameter analysis, noise figure analysis, loadpull analysis, DOE design and execution, simulation, test structure design, test methodology development

Preferred skills

High frequency design, layout and simulation tools (e.g., Cadence), project management, technical leadership

Technologies

FEOL, BEOL, Silicon, SiGe BiCMOS, S-parameter, noise figure, loadpull, Cadence

Responsibilities

Design and electrical characterization of RF devices (FET, bipolar, diodes, passives), conduct theoretical studies and simulations to optimize device performance, execute DOE and analyze results, establish new technology design rules and test methodologies, partner with unit process and failure analysis teams to improve yield, drive technical process problem solving

Seniority

Principal, hands-on IC with strategic oversight

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