CareerPlanSign in

Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

Hsinchu, Hsinchu City, tw💼 Full-time🗓 2026-07-30 → 2026-09-26

Core

Design and development of next-generation MV shielded-gate trench MOSFET technologies, driving innovation and product industrialization.

Role type

Principal IC process integration engineer (power semiconductors)

Builds

Next-generation MV shielded-gate trench MOSFET technologies

Domain

Power semiconductors / Automotive, Industrial, Infrastructure, IoT

Deliverable

production ML models | product features

Required skills

Power device physics, semiconductor fabrication processes, TCAD tools, simulation-based device analysis, wafer probing, yield improvement, technology transfer

Preferred skills

Ph.D. in Electrical Engineering or Physics, Si-based MV shielded-gate trench MOSFET experience

Technologies

TCAD tools

Responsibilities

Define and establish key process modules for MV shielded-gate trench MOSFET technology, perform wafer probing and analyze assembled product performance data, analyze wafer-level electrical test results and package-level performance data, support derivative technology development, lead yield improvement activities, support technology transfer to mass production

Seniority

Principal, hands-on IC with strategy & mentorship

Sourced via smartrecruiters · Listed on CareerPlan, which tracks 70,000+ jobs from 20+ sources.