CareerPlan

Next-Gen, High-Speed HBM, LPDDR Memory Controller ASIC Digital Design Engineer

San Diego, California, United States of AmericaFull-time$146k–$218k2026-09-17 → 2026-11-10

Core

Design and deploy next-generation high-speed HBM/LPDDR/DDR memory controllers for Qualcomm products, interfacing with CPU, GPU, DSP, and multimedia processors.

Role type

Senior IC ASIC Digital Design Engineer (Memory Controller)

Builds

High-speed memory systems (HBM, LPDDR, DDR) integrated into Qualcomm SoCs

Domain

Semiconductor / High-Speed Digital Design

Required skills

RTL coding, ASIC front-end digital design, Hardware Architecture, Synthesis, Timing Closure, Physical Design Support, Gate Level Simulation, Power Analysis, Memory transaction ordering

Preferred skills

LPDDR memory and cache controller, NoC based architectures, HBM memory type designs, On-chip SRAM & L3 cache controller, x86 or ARM CPU/bus architectures

Technologies

RTL, HBM, LPDDR, DDR, NoC, SRAM, L3 cache, x86, ARM

Responsibilities

Develop architecture and design specifications for memory controllers, implement RTL code, debug designs and provide support during integration, contribute to design methodology improvements

Seniority

Senior, hands-on IC