CareerPlan

Principal HIG ESD and Latch-up Engineer- HBM - TPG

Zhubei City, Hsinchu County, TaiwanFull-time2026-09-29 → 2026-11-10

Core

Define and own chip-level and IP-level ESD and latch-up strategies for HBM DRAM, base die, I/O, TSVs, and die-to-die interfaces to ensure product reliability.

Role type

Principal HIG ESD and Latch-up Engineer (HBM)

Builds

Next-generation HBM solutions for AI and machine learning

Domain

Semiconductor memory (DRAM/HBM) and ESD physics

Deliverable

production ML models

Required skills

ESD physics, latch-up mechanisms, advanced CMOS devices, ESD protection circuits, latch-up prevention techniques, JEDEC/ESDA standards, silicon validation, failure analysis, foundry interface

Preferred skills

HBM/DRAM ESD sign-off experience, SCR-based clamps, distributed ESD networks, rail-based strategies, foundry ESD team collaboration, mentorship

Technologies

HBM, CDM, JESD78, TSVs, I/O, SCR-based clamps

Responsibilities

Define and own chip-level and IP-level ESD and latch-up strategies; Establish ESD and latch-up requirements, targets, and sign-off criteria; Enable ESD protection circuits and latch-up safe layout practices; Lead silicon validation, failure analysis, and correlation; Act as the technical interface to foundries and partner with design, packaging, reliability, and product teams

Seniority

Principal, hands-on IC with mentorship