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GaN/BCD/Power Device Process Integration Engineer

Zhubei, Hsinchu County, Taiwan💼 Full-time🗓 2026-04-26 → 2026-07-22

Core

Develop and optimize GaN/BCD power device processes and technologies for external foundries to ensure manufacturability and production yield.

Role type

Process Integration Engineer (GaN/BCD)

Builds

GaN/BCD power devices and processes

Domain

Semiconductor manufacturing, Power electronics

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

GaN/BCD device physics, process flow integration, yield analysis, device characterization, failure analysis, statistical process control (SPC), design of experiments (DOE), new product introduction (NPI) management, foundry collaboration

Preferred skills

Module experience, new technology joint development in external foundries

Technologies

SPC, DOE, test chip, tapeout, IP merges, masks

Responsibilities

Collaborate with R&D and foundry to develop/optimize GaN/BCD power devices and processes; Perform advanced device characterization; Conduct detailed yield analysis to identify failure modes; Implement statistical process control (SPC) and design of experiments (DOE) methodologies; Manage multiple projects ensuring timely delivery; Coordinate with cross-functional teams to align project goals and deliverables

Seniority

Mid-to-Senior, hands-on IC

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