Wide Bandgap Device/PI Engineer (R&D)
Core
Leading the development, characterization, and optimization of Gallium Nitride (GaN) power devices for high-volume manufacturing.
Role type
Senior IC device/process engineer (GaN R&D)
Builds
GaN power devices and process flows
Domain
Semiconductor manufacturing / Power electronics / III-nitride materials
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
GaN device physics, III-V materials processing, TCAD simulation, Design of Experiment (DOE), electrical characterization, failure analysis, process integration
Preferred skills
GaN-on-Silicon technology, fab tool operation, packaging interaction knowledge, statistical data analysis
Technologies
TCAD, GaN HEMT process modules
Responsibilities
Develop robust process flows and drive DOE execution, collaborate with fab/manufacturing to ensure manufacturability, conduct failure root-cause investigation for yield improvement
Seniority
Senior, hands-on IC
