Principal Engineer
Core
Design and develop Gallium Nitride (GaN) power devices for high-efficiency power conversion, focusing on device physics, charge trapping mechanisms, and reliability.
Role type
Principal GaN Device Engineer
Builds
High-performance, robust GaN power devices for automotive, industrial, infrastructure, and IoT applications
Domain
Semiconductor hardware / Power electronics
Deliverable
production ML models | product features
Required skills
GaN device design, device physics, charge trapping mechanism analysis, device reliability assessment, advanced characterization techniques (Pulsed I-V, Transient drain current, MOS Interface trap analysis), technical leadership, cross-functional collaboration
Preferred skills
TCAD simulation (Sentaurus, Silvaco), reliability failure modeling, AEC-Q101 standard knowledge
Technologies
Sentaurus, Silvaco
Responsibilities
Drive technical understanding of GaN device physics and reliability; Define and evaluate new device architectures; Lead advanced device characterization and root-cause investigation; Collaborate with cross-functional teams to accelerate commercialization
Seniority
Principal, hands-on IC with strategic guidance
