CareerPlan

GaN Technology Development Engineer

Hitachinaka, Ibaraki, jpFull-time2026-10-15 → 2026-11-10

Core

Develop advanced GaN device structures and drive technology development through electrical characterization, data analysis, and process integration for high-efficiency power conversion.

Role type

Senior IC semiconductor device development engineer (GaN)

Builds

Next-generation high-efficiency power conversion technologies for emerging applications

Domain

Semiconductor industry, power electronics, GaN technology

Required skills

Device physics knowledge, electrical characterization, device testing, transistor geometry design, process integration, data-driven analysis, troubleshooting, TCAD simulation coordination, reliability testing, Python/JMP data analysis

Preferred skills

Power device or SiC technology experience, device reliability understanding, semiconductor test equipment proficiency, statistical data analysis

Technologies

Python, JMP, TCAD, parameter analyzers, SMUs/CMUs, curve tracers, oscilloscopes, pulse generators, probe stations

Responsibilities

Design device and PCM test structures, integrate processes, perform hands-on device characterization and testing for troubleshooting, coordinate with TCAD, process development, reliability test, and product engineering teams

Seniority

Mid-level, hands-on IC