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Sr. Principal Semiconductor Device Engineer (FinFET Technologies)

Hsinchu💼 Full-time🗓 2026-06-13 → 2026-07-31

Core

Lead technology enablement for advanced FinFET nodes by defining device architecture, driving tradeoff analysis, and ensuring successful product execution from concept to high-volume manufacturing.

Role type

Sr. Principal Semiconductor Device Engineer (FinFET Technologies)

Builds

Advanced node semiconductor platforms (FinFET/GAA) for automotive and high-reliability applications

Domain

Semiconductor manufacturing / Advanced CMOS technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Device physics, FinFET architecture, DTCO, SPICE/TCAD, yield analysis, failure analysis, statistical analysis (DOE), PDK validation, silicon correlation

Preferred skills

16nm and below nodes, GAA/nanosheet architectures, automotive-grade qualification (AEC-Q100), technology transfer leadership, foundry roadmap influence

Technologies

SPICE, TCAD, PDKs, DOE tools

Responsibilities

Define device architecture and scaling strategies; lead device-level tradeoff analysis; act as primary technical interface with external foundries; lead silicon validation and correlation; drive parametric yield improvement and failure analysis; mentor junior engineers and provide technical direction for test structures and characterization plans

Seniority

Sr. Principal, hands-on IC with strategy & mentorship

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