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Principal/Sr/Staff BEOL Engineer, DRAM PI

Hiroshima - Fab 15, Japan💼 Full-time🗓 2026-05-11 → 2026-07-31

Core

Lead module development for next-generation DRAM technology nodes, defining structural and electrical requirements and integrating modules across the process flow.

Role type

Principal/Senior/Staff Backend-of-Line (BEOL) Process Integration Engineer

Builds

Next-generation DRAM memory and storage solutions

Domain

Semiconductor manufacturing, DRAM process integration

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor device physics, electrical characteristics evaluation, materials science, JMP statistical analysis, Python data engineering, cross-functional collaboration, technical documentation

Preferred skills

5+ years in process integration, 2+ years in DRAM fab or DRAM transfer team, Front End/Middle of Line/Interconnect experience, device physics/electrical engineering background, fluent Japanese

Technologies

JMP, Python

Responsibilities

Define structural and electrical specifications for one or more modules; design, execute, and analyze experiments based on structure-electrical correlations; optimize existing process flows to meet product requirements; extract and analyze inline, defect, parameter, and probe data to improve yield and reliability; collaborate cross-functionally with design, product technology, modeling, and quality teams; maintain communication between R&D and pilot fabs; document R&D activities for manufacturing transfer.

Seniority

Senior, hands-on IC with strategic module ownership

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