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Intern - Design Engineer, HBM

Richardson, TX, US💼 Internship🗓 2026-10-04 → 2026-10-07

Core

Design, analyze, and optimize digital, analog, and memory circuits for High Bandwidth Memory (HBM) products supporting AI and HPC.

Role type

Intern, Design Engineer (HBM)

Builds

High-performance DRAM solutions for AI, HPC, and data-centric applications

Domain

Semiconductor / Memory Technology (via careerplan.io/jobs/JR111821-intern-design-engineer-hbm-at-micron)

Deliverable

production ML models

Required skills

CMOS circuit design, semiconductor device physics, schematic entry, circuit simulation (FineSim/HSPICE), Verilog modeling, scripting (Python/TCL/Perl)

Preferred skills

DRAM architecture, SoC/IO interfaces, AI-Assisted engineering tools

Technologies

FineSim, HSPICE, Verilog, Python, TCL, Perl

Responsibilities

Design and optimize memory/logic/analog circuits; perform circuit verification and parasitic modeling; collaborate with layout and verification teams; support product development ramps; leverage AI tools for design efficiency.

Seniority

Intern