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Intern - Design Engineer, HBM

Richardson, Texas, United States of America💼 Internship🗓 2026-09-21 → 2026-09-25

Core

Design, analyze, and optimize digital, analog, and memory circuits for High Bandwidth Memory (HBM) products supporting AI and HPC applications.

Role type

Intern, Design Engineer (HBM Memory)

Builds

High-performance DRAM solutions for AI, HPC, and data-centric applications

Domain

Semiconductor / Memory Technology / AI Hardware

Deliverable

production ML models | product features

Required skills

CMOS circuit design, semiconductor device physics, schematic entry, circuit simulation (FineSim, HSPICE), Verilog modeling, power network analysis, state machine logic, scripting (Python, TCL, Perl), analytical problem-solving

Preferred skills

DRAM architecture, SoC/IO interfaces, AI Agents/Generative AI tools, technical presentation

Technologies

FineSim, HSPICE, Verilog, Python, TCL, Perl

Responsibilities

Design and optimize memory, logic, and analog circuits; perform circuit verification and parasitic modeling; collaborate with layout and verification teams; partner with Product Engineering and Test teams; leverage AI-Assisted tools for design efficiency.

Seniority

Intern

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