CareerPlan

Intern - Design Engineer, HBM

Richardson, Texas, United States of AmericaInternship2026-09-21 → 2026-11-10

Core

Design, analyze, and optimize digital, analog, and memory circuits for High Bandwidth Memory (HBM) products supporting AI and HPC.

Role type

Intern, Design Engineer (HBM Memory)

Builds

High-performance DRAM solutions for AI, HPC, and data-centric applications

Domain

Semiconductor / Memory Technology

Deliverable

production ML models

Required skills

CMOS circuit design, semiconductor device physics, schematic entry, circuit simulation (FineSim, HSPICE), Verilog modeling, power network analysis, scripting (Python, TCL, Perl)

Preferred skills

DRAM architecture, SoC/IO interfaces, AI-Assisted tools, Generative AI

Technologies

FineSim, HSPICE, Verilog, Python, TCL, Perl

Responsibilities

Design and optimize memory, logic, and analog circuits; perform circuit verification and parasitic modeling; collaborate with layout and verification teams; partner with Product Engineering and Test teams; leverage AI-Assisted tools for design efficiency.

Seniority

Intern