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RF Technology Development Device Engineer - MTS

Essex Junction💼 Full-time💰 $98,000–$98,000🗓 2026-04-24 → 2026-07-31

Core

Develop and optimize SiGe HBTs and RF CMOS devices using TCAD simulation, electrical characterization, and process integration for RF technology.

Role type

Senior IC device engineer (RF/SiGe)

Builds

RF semiconductor devices and test structures

Domain

Semiconductor manufacturing / RF technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

TCAD simulation, SiGe HBT design, RF CMOS characterization, s-parameter analysis, loadpull measurement, data analysis, process integration, test methodology development

Preferred skills

High frequency design, noise figure measurement, project leadership, global matrixed team collaboration

Technologies

Cadence, TCAD tools

Responsibilities

Conduct TCAD simulations to optimize device performance; perform DC and RF characterization including high power measurements; establish new technology design rules and test methodologies; drive technical process problem solving; analyze data to support continuous improvement.

Seniority

Senior, hands-on IC

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