Fab 9 Technology Development GaN Epitaxial Engineer
Core
Design and develop discrete semiconductor GaN epitaxy processes for Analog, Mixed Signal, Power, and RF applications to meet performance, reliability, yield, and cost objectives.
Role type
Lead Epitaxy development engineer (GaN)
Builds
Discrete semiconductor GaN epitaxy processes for power and RF applications
Domain
Semiconductor manufacturing (Foundry), Wide band gap semiconductors (GaN, SiC)
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
MOCVD III-V epitaxial growth techniques, device physics (FET, BJT, LDMOS, HEMT), TCAD simulation, failure analysis (SIMS, SEM, TEM, AFM), process integration, manufacturability analysis
Preferred skills
PhD in relevant engineering/physics, 3-5 years epitaxial growth experience, advanced device electrical testing, global matrixed team collaboration
Technologies
MOCVD, TCAD, SIMS, SEM, TEM, AFM, SOI, SiGe
Responsibilities
Develop and evaluate MOCVD III-V epitaxial processes; Define and optimize superlattices, buffers, and device layers; Plan and manage wafer lot processing; Perform experiments and failure analysis; Collaborate with manufacturing and reliability teams; Document process specifications and qualification packages
Seniority
Senior, hands-on IC with strategic project guidance
