Engineer GaN Epi Development
Core
New graduate PhD candidate supporting GaN integration for Power and GaN Power Systems, focusing on epi and integration steps, material exploration, and joint-development projects with IMEC.
Role type
New graduate IC semiconductor engineer (GaN epi development)
Builds
GaN power devices and systems for Power Electronics and RF applications
Domain
Semiconductor manufacturing / Power Electronics / GaN technology
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
PhD in physics, electrical engineering, microelectronics; fundamental knowledge of semiconductor power and high electron mobility devices; ability to learn and transfer GaN epi and integration steps; ability to build relationships with vendors; ability to write invention disclosures; ability to contribute to publications and conferences
Preferred skills
GaN research, epi and integration experience; expertise in industrial integration of GaN device, process development and device testing; project management skills; strong planning & organizational skills
Technologies
GaN epi, Strain Relief Buffer layer, back-side barrier, selective S/D regrowth, CMP slurries, passivation
Responsibilities
Support GlobalFoundries technology development focus within the IMEC Industrial Affiliation Programs in GaN Power; organize and lead joint-development projects at IMEC; partner with IMEC's GaN ecosystem to explore new materials and integration schemes; understand application domains for GaN in Power Electronics and RF applications; influence IMEC Program and collect feedback from GF
Seniority
New graduate, hands-on IC
