CareerPlan

SR Design Eng. for SiC technologies

Catania, ItalyFull-time€50k–€60k2026-03-09 → 2026-10-24

Core

Design innovative device architectures for advanced high-voltage SiC MOSFET technologies to improve performance, robustness, reliability, and manufacturability.

Role type

Senior IC device engineer (SiC power MOSFETs)

Builds

High-voltage SiC power devices and edge termination structures

Domain

Semiconductor / Wide bandgap power electronics

Required skills

SiC device physics, device architecture design, electrical characterization, simulation and optimization, root cause analysis, technical reporting

Preferred skills

Collaboration with R&D and manufacturing, monitoring scientific literature and patents, building strategic collaborations with suppliers

Technologies

SiC MOSFETs, wide bandgap semiconductors, device simulation tools

Responsibilities

Develop SiC device projects from feasibility to industrialization; Design and optimize new SiC device structures and fabrication processes; Develop advanced edge termination structures for high-voltage SiC devices; Support customers through technical guidance and issue resolution

Seniority

Senior, hands-on IC