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Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer

Scottsdale, AZ, United States💼 Full-time🗓 2026-09-22 → 2026-09-25

Core

Design, simulate, and optimize next-generation low-voltage to medium-voltage silicon MOSFETs with a focus on shielded gate structures to improve performance metrics like Rds(on) and switching losses.

Role type

Senior IC power device design engineer

Builds

High-performance discrete power silicon devices

Domain

Semiconductor manufacturing / Power electronics

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor device physics, Synopsys TCAD (Sentaurus), 2D/3D device simulation, layout design rules, process integration, electrical characterization, breakdown voltage analysis, thermal behavior modeling

Preferred skills

Discrete power packaging technologies, reliability mechanisms (shield oxide integrity, electromigration), high-temperature stress testing, power electronics applications

Technologies

Synopsys TCAD, Sentaurus

Responsibilities

Drive architecture and optimization of shielded gate trench structures; perform extensive 2D/3D process and device simulations; define layout design rules and generate mask layouts; partner with process integration to define process flows and ensure manufacturability; analyze electrical test data to validate models and troubleshoot performance issues

Seniority

Senior, hands-on IC

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