CareerPlan

HBM Design Architect

Richardson, Texas, United States of AmericaFull-time2026-11-04 → 2026-11-10

Core

Lead technical enablement of novel memories and integration technologies (DRAM, gain-cell, stacked DRAM, hybrid bonding) for AI accelerators, HPC, and data centers.

Role type

Senior IC HBM Design Architect

Builds

Next-generation memory technologies and product architectures

Domain

Semiconductor / Memory / AI Hardware

Deliverable

production ML models

Required skills

DRAM/HBM product architecture, device physics, semiconductor process technology, system-technology co-optimization, roadmap planning

Preferred skills

PhD, vertically coordinated DRAM technologies, gain-cell structures, hybrid bonding, TSV-based 3D integration

Technologies

DRAM, HBM, hybrid bonding, TSV, CMOS-under-array

Responsibilities

Lead architecture and feasibility assessments for emerging memories and advanced integration; Translate device/process characteristics into product-level requirements; Identify technology–product gaps and drive de-risking plans; Partner with process, device, packaging, and design teams; Lead system-technology co-optimization studies; Develop roadmap proposals and present to technical leadership.