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Intern - Memory Design Engineer, HBM

Richardson, Texas, United States of America💼 Internship🗓 2026-10-04 → 2026-10-07

Core

Design, development, and validation of High Bandwidth Memory (HBM) products for AI, high-performance computing, graphics, and data center applications.

Role type

Intern, Memory Design Engineer (HBM)

Builds

Next-generation HBM memory solutions

Domain

Semiconductor / Memory / AI Hardware

Required skills

RTL development, circuit implementation, simulation, verification, functional analysis, timing analysis, power analysis, scripting, automation, Python, Verilog, SystemVerilog, VHDL

Preferred skills

Memory architectures (DRAM, SRAM, DDR, LPDDR, HBM), RTL design, synthesis, design verification, Linux/Unix, semiconductor EDA tools (VCS, Xcelium, Questa, PrimeTime, Innovus, Virtuoso), VLSI/ASIC/FPGA design, AI tools for engineering

Technologies

VCS, Xcelium, Questa, PrimeTime, Innovus, Virtuoso, Python, Perl, Tcl, C/C++, Verilog, SystemVerilog, VHDL

Responsibilities

Assist with HBM memory and logic design activities including RTL development, circuit implementation, simulation, verification, and functional analysis; Develop and use scripting, automation, and AI-assisted workflows to improve design productivity; Perform timing, power, and functional analysis of HBM subsystems; Collaborate with Design Verification, Physical Design, CAD, and Product Engineering teams; Document technical work, experimental results, build methodologies, and AI-assisted insights (via careerplan.io/jobs/44702971-intern-memory-design-engineer-hbm-at-micron)

Seniority

Intern