Intern - Advanced DRAM Process Integration
Core
Support the development of next-generation 3D DRAM technologies focusing on device performance, reliability, and manufacturability within a new 300mm R&D facility.
Role type
Intern, IC Process Integration Engineer
Builds
Next-generation memory structures including charge storage devices and thin-film transistors
Domain
Semiconductor manufacturing / Memory technology
Required skills
Semiconductor device fabrication, Materials science, Device physics, Experimental design, Data analysis, AI tool usage
Preferred skills
Advanced DRAM experience, Statistical modeling, Generative AI application, Project management
Technologies
300mm R&D facility, AI tools, Electrical characterization, Probe data analysis
Responsibilities
Design and analyze experiments in the R&D fabrication environment, Collaborate with multi-functional teams to resolve integration issues, Analyze inline and electrical data to identify variability and risks, Leverage AI tools for engineering analysis and productivity improvements
Seniority
Intern