Permanent Researcher in Next-Generation Semiconductor Devices at NIMS
Core
Research and development of ultra-high-speed and ultra-low-power GAA-CFET (Gate-All-Around Complementary Field-Effect Transistors) using 2D transition metal dichalcogenides and oxide semiconductors.
Role type
Researcher, Next-Generation Semiconductor Devices
Builds
Ultra-high-speed, ultra-low-power semiconductor devices
Domain
Semiconductor materials and devices, 2D materials, oxide semiconductors
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
Thin-film deposition, crystal growth, characterization of 2D materials, semiconductor device fabrication, integration technologies
Preferred skills
Experience with Group IV, III-V, III-N, oxide semiconductors, 2D transition metal dichalcogenides
Technologies
GAA-CFET, 2D transition metal dichalcogenides, oxide semiconductors
Responsibilities
Conduct research on thin-film deposition and characterization of 2D materials; Develop semiconductor device fabrication and integration technologies
Seniority
Senior, hands-on IC
