Principal Medium Voltage Power MOSFET Design Engineer
Core
Design and development of next-generation medium voltage shielded-gate trench MOSFET technologies, focusing on process modules, device concepts, and technology transfer to mass production.
Role type
Principal power semiconductor device design engineer
Builds
Next-generation MV shielded-gate trench MOSFET technologies for automotive, industrial, infrastructure, and IoT applications
Domain
Power electronics / Semiconductor fabrication
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
Power device physics, semiconductor fabrication processes, TCAD simulation, wafer-level electrical test analysis, package-level performance analysis, yield improvement, technology transfer
Preferred skills
Ph.D. in Electrical Engineering or Physics, Si-based MV shielded-gate trench MOSFET experience, advanced device design concepts
Technologies
TCAD tools
Responsibilities
Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology, Develop TCAD simulation decks and propose advanced device design concepts, Analyze wafer-level electrical test results and package-level performance data, Lead yield improvement activities and support technology transfer to mass production, Contribute to the development of derivative products based on established technology platforms
Seniority
Principal, hands-on IC with strategy & mentorship
