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NAND BM IP RTL Design Engineer

💼 Full-time🗓 2026-02-09 → 2026-07-31

Core

Designing high-performance RTL for Samsung Memory products (Flash, DRAM) with a focus on concept study, specification, and micro-architecture.

Role type

Senior IC RTL Design Engineer (Memory)

Builds

Memory IP blocks (Flash, DRAM) for System LSI and Storage Solutions

Domain

Semiconductor / Memory / RTL Design

Deliverable

production ML models | product features

Required skills

Verilog, System Verilog, complex state machine design, data path design, arbitration logic, emulation-compatible RTL design, unit-level testbench creation, performance simulation, area optimization, FPGA prototyping, micro-architecture documentation

Preferred skills

Memory design experience, area optimization on emulation platforms

Technologies

Verilog, System Verilog, FPGA

Responsibilities

Perform concept and specification study for Samsung Memory (Flash, DRAM), provide high-quality RTL design optimized for performance and area, write detailed design specification and micro-architecture documents, model and simulate performance, develop FPGA-based prototypes

Seniority

Senior, hands-on IC

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