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Sr Engineer, Adv DRAM PI

Boise, ID - Main Site💼 Full-time🗓 2026-05-11 → 2026-07-31

Core

Lead technology integration and device architecture development for next-generation layered memory technology, bridging device physics and materials science to enable manufacturable solutions for AI and VR applications.

Role type

Sr Engineer, Advanced DRAM Process Integration

Builds

Novel layered memory devices (charge storage devices, thin-film transistors) and advanced node technologies

Domain

Semiconductor manufacturing / Memory technology / Device physics

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor process integration, Device physics, Experiment design (DOE), Multi-functional team leadership, Complex project management, Yield improvement analysis, Failure mechanism analysis, Process flow optimization, Architecture development, Technology pathfinding

Preferred skills

Mainstream memory technologies (DRAM, NAND), Circuit and architecture scaling knowledge, Non-conventional architecture R&D experience

Technologies

R&D fab equipment, Thin-film transistors (TFTs), Charge storage devices, Inline defect analysis tools, Parametric data analysis systems

Responsibilities

Lead technology integration activities for new layered memory devices, Develop and integrate new device architectures from concept to silicon, Optimize process flows for performance and reliability, Build and complete experiments in the R&D fab, Analyze inline, defect, and parametric data to drive yield improvement, Communicate complex technical findings to technical and non-technical audiences

Seniority

Senior, hands-on IC with strategic R&D impact

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