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Principal HIG ESD and Latch-up Engineer- HBM - TPG

2 Locations💼 Full-time💰 $175,000–$175,000🗓 2026-04-17 → 2026-07-31

Core

Define and own chip-level and IP-level ESD and latch-up strategies for HBM DRAM, base die, I/O, TSVs, and die-to-die interfaces to ensure product reliability.

Role type

Principal HIG ESD and Latch-up Engineer (HBM)

Builds

Next-generation HBM solutions for AI and machine learning

Domain

Semiconductor memory (HBM/DRAM) and ESD physics

Deliverable

production ML models

Required skills

ESD physics fundamentals, latch-up mechanisms, advanced CMOS devices, ESD protection circuit design, latch-up prevention techniques, JEDEC/ESDA standards knowledge, silicon validation, failure analysis, foundry partnership management

Preferred skills

HBM/DRAM ESD sign-off experience, SCR-based clamp design, distributed ESD networks, rail-based strategies, foundry ESD team collaboration, engineering mentorship

Technologies

HBM, DRAM, TSV, JEDEC, ESDA, CDM, JESD78

Responsibilities

Define chip-level and IP-level ESD and latch-up strategies; Establish ESD and latch-up requirements and sign-off criteria; Enable ESD protection circuits and safe layout practices; Lead silicon validation and failure analysis; Act as technical interface to foundries

Seniority

Principal, hands-on IC with strategy & mentorship

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