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DRAM Device Engineer Lead

Taichung - Fab 16, Taiwan💼 Full-time🗓 2026-04-22 → 2026-07-30

Core

Provide technical leadership in enabling next-generation DRAM technologies in high-volume manufacturing, driving yield ramp, device performance, and product quality across the fab.

Role type

Lead DRAM Device Engineer

Builds

Next-generation DRAM memory and storage products

Domain

Semiconductor manufacturing / Memory technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor device physics, High-volume manufacturing yield ramp, Device segmentation and electrical data analysis, CMOS and circuit operation, Statistical data analysis, Data-driven problem solving

Preferred skills

DRAM or other memory technologies (NAND, NOR), Technical leadership or mentorship experience

Technologies

Python, C++, Data automation tools

Responsibilities

Lead and coordinate remote device engineering team in Taiwan, Provide technical leadership across time zones for issue triage and handoffs, Drive alignment on device performance, yield, and reliability priorities, Lead remote reviews of electrical data and characterization results, Establish standardized communication and reporting mechanisms, Support fab ramp and high-priority production issues via root-cause analysis, Mentor remote engineers in device analysis and DOE strategy

Seniority

Lead, hands-on IC with mentorship

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