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Advanced CMOS Device & Process Integration Engineer

Hiroshima - Fab 15, Japan💼 Full-time🗓 2026-04-14 → 2026-07-31

Core

Developing and integrating advanced CMOS devices (FinFET, Nano-sheets, vertical GAA) for high-volume manufacturing in memory and storage solutions.

Role type

Advanced CMOS Device & Process Integration Engineer

Builds

High-performance DRAM, NAND, and NOR memory and storage products

Domain

Semiconductor manufacturing / Memory and storage

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

CMOS Transistor Physics, FinFET technology, Nano-sheets, vertical GAA, test structure design, parametric test definition, silicon experiment analysis, transistor model validation, process monitoring, data analysis tools

Preferred skills

DRAM Design, DRAM Test, Japanese language skills

Technologies

TCAD, test structure design tools, parametric test definition tools

Responsibilities

Develop and implement device integration roadmap, improve device portfolio performance and cost efficiency, conduct and analyze silicon experiments, validate transistor models, define electrical test structures and design rule verification, monitor process parameters

Seniority

Mid-level, hands-on IC

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