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Principal Engineer, (NAND Cell Film Process)

Fab 10N/X, Singapore💼 Full-time🗓 2025-12-15 → 2026-08-01

Core

Define technical strategy and lead the development, integration, and scaling of thin film processes for advanced NAND memory devices.

Role type

Principal Engineer, Process Development (Cell Film)

Builds

Next-generation NAND memory nodes and high-volume manufacturing processes

Domain

Semiconductor manufacturing, NAND flash memory, thin film deposition

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Thin film deposition (ALD, CVD), process-device interaction analysis, reliability engineering, device physics (MOSFET, 3D NAND), failure analysis, statistical process control (SPC), design of experiments (DOE), material chemistry, chamber/plasma optimization, yield improvement, technology transfer

Preferred skills

Industry consortium participation, competitive benchmarking, cost reduction program leadership, emerging trend identification

Technologies

Atomic Layer Deposition (ALD), Chemical Vapor Deposition (CVD), X-ray Reflectivity (XRR), ellipsometry, Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS)

Responsibilities

Define technical strategy for cell film process development; lead multi-functional teams in scaling thin film processes; oversee end-to-end development of process modules; resolve complex technical challenges and perform root cause analysis; mentor senior engineers; represent the function in technical forums and industry consortia; drive technology transfer from R&D to manufacturing; lead cost reduction and yield improvement programs

Seniority

Principal, strategic leadership & hands-on technical execution

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