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TDT CMOS PI

Taichung - Fab 16, Taiwan💼 Full-time🗓 2026-09-10 → 2026-09-25

Core

Lead cross-functional exploration and development of future CMOS device architectures and drive technology transfer from development to manufacturing for DRAM technology roadmaps.

Role type

Senior IC semiconductor device engineer (CMOS/DRAM)

Builds

Future CMOS device architectures and non-planar transistor technologies for DRAM

Domain

Semiconductor manufacturing / Memory and storage

Deliverable

production ML models | product features

Required skills

CMOS device design, process integration, semiconductor device physics, TCAD simulation, statistical analysis (DOE), technology transfer, cross-functional leadership

Preferred skills

AI/ML application in engineering, Python, data analytics, advanced CMOS architectures, Generative AI tools

Technologies

Synopsys Sentaurus, JMP, CEDA, Python, MATLAB

Responsibilities

Align TDT CMOS Device development with Technology Development sites; drive collaboration with Design, TCAD, Modeling, and Product Engineering groups; develop new technology nodes to mature manufacturing capability; ensure CMOS devices meet electrical, performance, power, variability, and reliability targets; facilitate successful technology transfer and production ramp with manufacturing fabs; lead cross-functional exploration of future CMOS device architectures; drive adoption of AI, machine learning, and engineering automation solutions; develop and deploy digital methodologies to improve engineering efficiency.

Seniority

Senior, hands-on IC

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