MTS Lead DRAM Device Engineer
Core
Lead DRAM device development, characterization, and yield improvement to enable successful fab ramps and next-generation memory technology transitions.
Role type
Senior IC device engineer (DRAM)
Builds
Next-generation DRAM memory solutions for high-volume manufacturing
Domain
Semiconductor manufacturing / Memory technology
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
Semiconductor device physics, device characterization, electrical data analysis, statistical analysis, root-cause analysis, cross-functional technical leadership, data-driven problem solving
Preferred skills
DRAM/NAND/NOR memory technology experience, memory architecture and array operation knowledge, margin bin analysis, AI tools for data analytics in semiconductor manufacturing, AI-assisted anomaly detection
Technologies
Semiconductor manufacturing tools, electrical data analysis platforms, AI analytics tools
Responsibilities
Lead DRAM device activities and serve as primary technical point of contact; Drive device characterization and electrical data analysis to improve yield and performance; Support new node introductions and fab ramps through root-cause analysis; Provide technical direction across Process Integration, Product Engineering, Design, Quality, and Failure Analysis teams; Mentor engineers and promote best practices in device analysis and experimentation
Seniority
Senior, hands-on IC with mentorship responsibilities