Staff Engineer GaN Technology Development (f/m/div)
Core
Develop next-generation GaN power platforms to make power conversion more efficient, smaller, and sustainable.
Role type
Staff Engineer, GaN Technology Development
Builds
Next-generation GaN power platforms for power conversion applications
Domain
Semiconductor industry, Wide-bandgap power electronics
Required skills
Semiconductor device physics, GaN and HEMT structures, DOE methodologies, Statistical analysis, Process integration, Root-cause investigation (via careerplan.io/jobs/7891378-staff-engineer-gan-technology-development-fmdiv-at-infineon-technologies-austria-ag)
Preferred skills
German language, Master's or PhD in Electrical Engineering/Microelectronics/Physics/Materials Science
Technologies
GaN, HEMT structures
Responsibilities
Advance GaN technology nodes and develop next-generation power platforms, Own key process blocks end-to-end from proof of concept to optimization, Define and maintain the Process of Record (POR), Plan and run experiments using DOE methodologies, Perform statistical analysis and derive actionable conclusions, Support root-cause investigations for stability and reliability issues
Seniority
Staff, hands-on IC with strategic ownership