PhD in Advanced Epitaxial Growth for InP-Based Photonic Integrated Circuits
Core
PhD research on the epitaxial growth of InP-based materials (InGaAsP, InAlGaAs) to optimize material uniformity and correlate growth parameters with the electro-optical performance and reliability of active photonic components like lasers and amplifiers.
Role type
PhD researcher (Materials Science/Photonics)
Builds
Next-generation optical generation and amplification components for photonic integrated circuits (PICs)
Domain
Semiconductor physics, epitaxial growth, photonic integrated circuits
Deliverable
production ML models
Required skills
Epitaxial growth processes (MOCVD/MOVPE), compound semiconductor materials, semiconductor physics, crystallography, material characterization, statistical data analysis, predictive modeling, failure analysis
Preferred skills
Experience with large-scale integration of PICs, collaboration with commercial foundry partners
Technologies
Aixtron epi reactor, InGaAsP, InAlGaAs
Responsibilities
Explore limits of epitaxial growth for InP-based materials, correlate growth parameters to device performance, develop predictive models connecting physics/chemistry to manufacturability, analyze large datasets to identify failure mechanisms and defects
Seniority
PhD candidate