CareerPlan

DRAM Pathfinding & Process Integration Engineer

Remote, New York, United States of AmericaFull-time$159k–$271k2026-11-09 → 2026-11-10

Core

Lead early-stage technology investigation and process integration for next-generation DRAM architectures, translating requirements into integrated process solutions to reduce risk before formal development.

Role type

Senior IC process integration engineer (semiconductor R&D)

Builds

Next-generation DRAM concepts, materials, and process architectures including High-NA EUV

Domain

Semiconductor manufacturing / Memory technology

Required skills

Process integration, DOE methodologies, statistical analysis, semiconductor device physics, memory technologies, technical problem-solving

Preferred skills

DRAM technology development, High-NA EUV lithography, technology scouting, AI-assisted analytics, Python, JMP, SQL

Technologies

High-NA EUV, CMP, metrology, dry etch, thin films, lithography

Responsibilities

Lead pathfinding investigations of next-generation DRAM concepts, materials, and process architectures; Develop and integrate process flows across lithography, dry etch, thin films, CMP, metrology, and device engineering; Design and implement DOE and technology-learning experiments using statistical and AI-assisted analytics; Collaborate with equipment suppliers, research partners, and internal teams to evaluate emerging capabilities; Support transition of successful concepts into technology development by documenting key learning and risks.