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SiC EPD Engineer

Bucheon-si, Gyeonggi-do, Korea, Republic of💼 Full-time🗓 2026-08-13 → 2026-09-26

Core

Develop new SiC power MOSFET products, identify device/process weaknesses, and reduce defects to enable high yield and robust performance.

Role type

Junior IC SiC Early Product Development Engineer

Builds

Next-generation SiC power MOSFETs

Domain

Semiconductor manufacturing / SiC technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

SiC device physics, process integration, TCAD simulation, yield engineering, defect analysis, DOE execution, root-cause analysis, cost analysis, layout tools (Cadence Virtuoso), correlation analysis

Preferred skills

Experience in HV Silicon device/process development, cross-functional leadership

Technologies

TCAD, Cadence Virtuoso, SiC, Silicon

Responsibilities

Plan and execute engineering lots and DOE activities; Perform yield analysis for SiC material and fab-induced defects; Drive cost and yield analysis; Provide technical support for production issues and root-cause analysis; Perform TCAD simulations to optimize device technologies; Lead cost reduction and yield-up initiatives; Conduct correlation analysis between electrical and process data; Utilize layout tools for device review and design-process interaction analysis; Collaborate with Device, Process, Yield, Reliability, and Manufacturing teams.

Seniority

Junior, hands-on IC

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