SiGe HBT Device Expert
Core
Develop, characterize, and optimize BiCMOS SiGeC devices for volume production in RF/mm-wave applications.
Role type
Senior IC process development engineer (SiGe HBT)
Builds
Next-generation BICMOS SiGeC technologies and components
Domain
Semiconductor manufacturing, RF/mm-wave electronics
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
SiGe HBT device physics, TCAD simulation, design of experiments, RF/DC characterization, statistical data analysis
Preferred skills
Ph.D. in EE/Physics, production flow delivery experience, 3D field solver simulation, Cadence layout, MATLAB/JMP proficiency
Technologies
TCAD, HF simulations, MATLAB, JMP, Cadence
Responsibilities
Develop new processes and components for BICMOS SiGeC technologies; Drive TCAD simulation, design of experiments, and RF/DC characterization; Collaborate with process, integration, reliability, and circuit design teams; Optimize BICMOS component performance to meet final device parameters; Lead technical discussions and drive schedules across development groups.
Seniority
Senior, hands-on IC
