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Staff Engineer, Adv DRAM PI

Boise, ID - Main Site💼 Full-time🗓 2026-05-11 → 2026-07-31

Core

Lead technology development for the first vertically stacked memory device, bridging device physics, materials science, and process integration to enable future memory scaling.

Role type

Staff Engineer, Advanced DRAM Process Integration

Builds

Advanced memory devices (DRAM/NAND) for AI and high-performance computing

Domain

Semiconductor manufacturing / Memory technology / Materials science

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor device physics, Materials science, Process integration, Experiment design, Data analysis, Statistical applications

Preferred skills

DRAM and NAND technology knowledge, Cross-functional team leadership, Project management, Alternative memory technology expertise

Technologies

300mm R&D fab equipment, Thin-film transistors, Charge storage devices

Responsibilities

Lead technology development for vertically stacked memory devices, Optimize process flows for quality and manufacturability, Collaborate with design and yield teams to resolve performance issues, Design and execute experiments in the R&D fab, Analyze parametric and probe data to evaluate failure mechanisms, Communicate technical findings and drive implementation of solutions

Seniority

Staff, hands-on IC with strategic scope

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