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Principal / Senior / Engineer, E-characterization DRAM

Hiroshima - Fab 15, Japan💼 Full-time🗓 2026-05-11 → 2026-07-31

Core

Analyze advanced electrical characterization results to improve cell device performance, high-performance CMOS, and interconnects for future memory products.

Role type

Principal/Senior E-characterization Engineer (DRAM)

Builds

Next-generation DRAM memory products

Domain

Semiconductor memory / DRAM device technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

Semiconductor device physics, CMOS architecture, circuit operation (ring oscillator, multiplexer), parametric analysis, test environment creation, data automation, statistical data analysis, root cause analysis

Preferred skills

C++ or Python programming, high-frequency (RF) device characterization, RTN noise analysis, semiconductor analyzers, network analyzers, oscilloscopes, high-frequency measurement tools

Technologies

C++, Python, semiconductor analyzers, network analyzers, oscilloscopes

Responsibilities

Analyze electrical characterization results to optimize cell device performance and interconnects; create test environments matching product generations; propose test structures for device characteristics; develop data automation tools; analyze big data for yield improvement; collaborate with device integration, process development, and failure analysis teams

Seniority

Senior, hands-on IC

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