Principal Diffusion Process Development Engineer, DRAM
Core
Leading FEOL diffusion, annealing, and gate oxidation process advancement for advanced DRAM devices, focusing on gate dielectric scaling and manufacturing readiness.
Role type
Principal Diffusion Process Development Engineer
Builds
Ultra-thin gate dielectrics and advanced DRAM technology nodes
Domain
Semiconductor manufacturing / Memory storage
Deliverable
production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work
Required skills
Device physics (MOS behavior), Diffusion and oxidation principles, Thermal processing and reaction kinetics, Dopant behavior and activation, Interface and defect control, Process scaling to manufacturing, Statistical process control (SPC), Equipment qualification, Data analysis
Preferred skills
Gate dielectric reduction in DRAM/logic, FEOL integration, Characterization techniques (TEM, SIMS, XPS, AFM, SEM, ellipsometry), Cross-functional leadership, Equipment vendor collaboration
Technologies
TEM, SIMS, XPS, AFM, SEM, ellipsometry, diffusion hardware, oxidation reactors
Responsibilities
Lead FEOL diffusion, thermal treatment, and gate oxidation operations; Develop and scale ultra-thin gate dielectrics; Own interaction between process conditions, materials, and hardware; Drive process development from concept to manufacturing transfer; Evaluate and optimize diffusion/oxidation equipment platforms; Define and monitor manufacturing metrics (SPC, capability, defectivity); Analyze characterization data to guide development decisions; Generate IP and technical documentation; Mentor developing engineers.
Seniority
Principal, technical leadership & hands-on IC