Promotion - Physikalisches Verständnis von Designelementen in SiC Power MOSFETs
Core
Develop and simulate Wide-Bandgap power devices and test structures using TCAD, fabricate them in a cleanroom, and characterize their electrical and physical properties to optimize simulation models.
Role type
PhD Researcher (Silicon Carbide Power MOSFETs)
Builds
Next-generation energy-efficient power devices for electric drives
Domain
Semiconductor physics and power electronics
Required skills
Solid-state and power semiconductor physics, semiconductor modeling, TCAD simulation, cleanroom fabrication, electrical characterization
Preferred skills
Wide-Bandgap or III-V semiconductor expertise
Technologies
TCAD, SiC, cleanroom equipment
Responsibilities
Develop and simulate Wide-Bandgap power devices and test structures; Analyze device properties using modern TCAD simulations; Fabricate devices and test structures in a cleanroom; Characterize components for electrical and physical properties; Optimize and calibrate simulation models based on characterization results
Seniority
PhD Candidate
