Promotion - Physikalisches Verständnis von Designelementen in SiC Power MOSFETs
Core
Develop and simulate precise Wide-Bandgap power devices and test structures for electric drive systems, focusing on SiC Power MOSFETs.
Role type
PhD Researcher (Physics/Semiconductor Technology)
Builds
Next-generation energy-efficient power electronic systems using Wide-Bandgap materials
Domain
Power electronics / Semiconductor physics / Electric drives
Deliverable
production ML models | product features | research
Required skills
Solid-state and power semiconductor physics, Semiconductor modeling, TCAD simulation, Device characterization, Experimental fabrication in cleanroom
Preferred skills
Wide-Bandgap or III-V semiconductor expertise
Technologies
TCAD, SiC, Cleanroom fabrication
Responsibilities
Develop and simulate Wide-Bandgap power devices and test structures; Analyze device physical properties using modern TCAD simulations; Fabricate power devices and test structures in a research cleanroom; Characterize and analyze components for electrical and physical properties; Optimize and calibrate simulation models based on characterization results
Seniority
PhD Candidate / Researcher
