Staff Engineer GaN Technology Development (f/m/div)
Core
Advance GaN technology nodes and develop next-generation GaN power platforms to make power conversion more efficient, smaller, and sustainable.
Role type
Staff Engineer, GaN Technology Development
Builds
Next-generation GaN power platforms for power conversion applications
Domain
Semiconductor manufacturing / Wide-bandgap power electronics
Required skills
GaN device physics, HEMT structures, Process integration, DOE methodologies, Statistical analysis, Root-cause investigation, Process of Record (POR) definition, Manufacturing scalability
Preferred skills
Experience in power semiconductors, Wide-bandgap technologies
Technologies
GaN, HEMT
Responsibilities
Advance GaN technology nodes and develop next-generation GaN power platforms; Own key process blocks end-to-end from proof of concept to optimization; Define and maintain the Process of Record (POR); Plan and run experiments using DOE methodologies; Perform statistical analysis to derive actionable conclusions; Support root-cause investigations for stability and reliability issues
Seniority
Staff, hands-on IC with strategic scope