STAGE - Étude de la Variabilité Locale RF des Transistors Bipolaires F/H
Core
Characterize the local variability of RF parameters (S-parameters, junction capacitances, parasitic resistances, transit time) in Heterojunction Bipolar Transistors (TBH) within an advanced SiGe BiCMOS technology.
Role type
Intern, RF characterization and statistical analysis
Builds
Improved SPICE models for high-performance communication applications
Domain
Semiconductor physics / RF engineering / SiGe BiCMOS technology
Required skills
RF measurement techniques, statistical analysis, semiconductor physics, SPICE modeling, SiGe BiCMOS technology knowledge
Preferred skills
Knowledge of parasitic extraction, transit time analysis, S-parameter analysis
Technologies
SPICE, S-parameter measurement, SiGe BiCMOS
Responsibilities
Perform RF S-parameter measurements on silicon test structures, Extract and analyze electrical parameters and their statistical dispersion, Identify physical mechanisms causing variability, Implement identified variability sources into existing SPICE models
Seniority
Intern, final year of Engineering School or Master2